Keywords: diamond, high temperature electronics, fullerene, new electronic materials, semiconductors
Start Date: 1 January 95 / Status: finished / Duration: 24 months
[ participants / contact]
Fullerene is a semiconductor with a broad gap intermediate between silicon and diamond and a precursor in diamond film fabrication. The objective of NADIFU is to assess the feasibility and performance of diamond-fullerene electronic devices and to provide technical design data for high temperature diamond devices. The collaboration will exploit expertise at the Shanghai Institute of Technical Physics in the field of thin film device design and high temperature assessment, while the EU teams will provide expertise in CVD diamond growth and fullerene materials and will fabricate the devices.
European links: Esprit Network of Excellence HITEN (6107).
Experimental work within the project has revealed many specific features of the CVD diamond films, the fullerene films and the diamond/fullerene devices. The evaluation of the technological implications of these features is in progress.
The results will be disseminated throughout the EU via the HITEN Network of Excellence. The project will establish links with Chinese expertise in the area of novel semiconductor device designs and will provide access to Chinese design and test protocols. The technical data will also be presented at a HITEN workshop.
A final report with the assesment of the technological potential of diamond and fullerene as new electronic materials will be available at the end of the project.
D-70569 STUTTGART, D
Max-Planck-Institut für Festkörperforschung, D
AEA Technology, Harwell Laboratory, Oxfordshire, UK
Chinese Academy of Sciences, CHI
Dr. Siegmar Roth
Tel: +49 711 6891 434
Fax: +49 711 6891 010
NADIFU - EC-AS075, May 1997
please address enquiries to the ESPRIT Information Desk
html version of synopsis by Nick Cook