Work Area: Alternative Advanced Semiconductor Materials, Devices and Process Steps
Keywords widebandgap semiconductors
Start Date: 20 November 92 / Duration: 36 months / Status: running
[ participants / contact ]
Abstract It is fully expected that high-temperature electronics research will have a major technological impact in Europe, the USA and Japan over the next ten years. Widebandgap semiconductors offer the opportunity, via a European network of excellence, to demonstrate to industry within the EU the advanced innovations which are possible in the field of high-temperature electronics. The nodes of HITEN have extensive experience of these electronic materials to act as a catalyst to bring the potential developments to the attention of SMEs and other industrial organisations.
The objectives of HITEN are to create a basic research infrastructure across Europe in the field of high temperature electronics, provide the basic process steps to enable high-temperature electronic devices to be fabricated, and demonstrate the operation of high-temperature electronic devices at temperatures higher than 300 íC.
The Network intends to forge strong links with parallel research teams in the USA, Japan and the CIS. The Network also intends to act as a dissemination tool so that organisations across Europe interested in this field will be able to obtain up to date data and expertise to assist them in the exploitation of appropriate technologies.
HITEN consists of an executive board made up of four main nodes. These nodes have overall programme management responsibility for individual tasks. In addition, the founding nodes (15 altogether) form the HITEN Research Directorate, from which strategy and initiatives are launched in order to promote the interests of the Network and high-temperature electronics across the EU. Each of HITEN's founding nodes has been chosen in order to provide a range of complementary expertise. A number of the founding nodes also act as national foci so that matters arising within each EU country can be drawn to the attention of the Network at large.
Considerable emphasis has been placed on increasing the number of "associated nodes" within the Network. These associated nodes, of which a significant number are SMEs, are generally industrial companies interested in high-temperature electronics. Some 200 associated nodes have so far joined HITEN.
Encouraging discussions have been held with research teams in the CIS, Japan and USA with a view to forming formal links with the appropriate networks in these regions.
HITEN is also producing a newsletter every three to four months covering technical developments in the field of high-temperature electronics and issues such as the possibilities for the coordinated development of research programmes and opportunities for industrial exploitation of emergent technologies.
In addition, HITEN is organising a series of meetings across the EU to discuss state-of-the-art developments in the field of high-temperature electronics.
Further information about HITEN is available from the HITEN home page <URL:http://www.hiten.com/>.
AEA Technology - UK
Harwell Building 552
UK - DIDCOT OX11 ORA
IMEC - B
CSEM - CH
IMO - D
MBB - D
Philips - D
Technische Universität Berlin - D
Aarhus Universitet - DK
Dansk Teknologisk Institut - DK
INASMET - E
CSIC - Universidad Autonoma de Madrid - E
CNRS-LCS - F
CNRS-LEPES - F
Sigillium - NL
Katholieke Universiteit Nijmegen - NL
Kings College London - UK
Dr. I. M. Buckley-Golder
HITEN - 6107, August 1994
please address enquiries to the ESPRIT Information Desk
html version of synopsis by Nick Cook