Advanced Integrated Millimetre-Wave Sub-Assemblies


AIMS - 5032

Keywords millimetre waves, III-V materials, MMICs


Start Date: 01-JAN-90 / Duration: 48 months

[ contact / participants ]


Objectives and Approach

The next decade will see a proliferation of new applications which will call on mm-wave techniques for the transmission of information together with other uses with Radar and Measurements, all associated with civil applications. The communications spectrum is rapidly becoming too confined to accommodate the increase in traffic unless high frequencies become available. V-sat system will move to 30 GHz, vehicle mobile communications to 63 GHz and Doppler Radar to 78 GHz. Urban short hop links are also following the same direction.

The need is there, the limiting factor is the demand for sound, cheap hardware with reliable industrial components. At 30 GHz and above however new technologies and devices have to be developed. This is essentially the object of this project. The originality is that the devices and technology are driven by the system's requirements expressed by three of the partners in the AIMS consortium. Together with this activity to define the system needs, there is a group engaged in working on circuit optimisation and an advanced device development in the research and development of the components companies.

The concept is to build the project in a vertical structure very applications-oriented, and bring to the market an industrial, second source facility capable of providing equipment and system houses with the mm-wave components which they need. The demonstrators will be functional blocks of front-ends for two similar communication systems at approximately 30 GHz: a short-hop land-based link, and a 20/30 GHz V-SAT system. The devices will include MESFETs (including SAGFETs), HBTs (Heterojunction Bipolar Transistors), and DMTs (Doped-Channel, MIS-like Transistors), and use will be made of the PM HFET (pseudomorphic heterojunction field-effect transistor) being developed in project 2035. The circuits will include LNAs, VCOs, T/R switches, mixers, up-converters, ADCs and power amplifiers (SSPA). The sub-assemblies acting as demonstrators will be a synthesiser for a V-SAT front-end, the associated transceiver, and a receiver assembly for a short hop link made of circuits developed in the course of this work. For these sub-assembly demonstrators a conventional version of some functions will, in a first approach, be realised with MESFET technology, which will be replaced later by the more advanced devices.

Progress and Results

The project has already completed the system definition of sub-assembly and device requirements for the V-Sat and Short Hop Links at 30 GHz. Based on this, the device partners have developed heterojunction devices (such as HBT and pseudo-morphic HFET) needed in such systems. These devices are being incorporated into sub-assembly circuit development to make the demonstrators needed for the completion of next year's programme. The programme is up to schedule and all targets have been reached. System definitions and trade-offs defined HBT with f[t] = 30 GHz, f[max] = 45 GHz, DMT with 45% efficiency as power amplifiers. Pseudo-morphic transistors which show 1.8 dB noise at 18 GHz have also been developed, and a useful spin-off from another ESPRIT project (2035) has been fully exploited for these devices.


CONTACT POINT

Mr John Magarshack
THOMSON-CSF
Route Departementale 128
F - 91401 ORSAY CEDEX
tel: + 33/ 1-60197109
fax: + 33/ 1-60197929
telex: 616780 THOM

Participants

THOMSON-CSF - F - C
ALCATEL ESPACE - F - P
ELEKTRONIK CENTRALEN - DK - P
TELEFUNKEN ELECTRONIK GMBH - D - P
UNIV. DES SCIENCES ET TECHNIQUES
DE LILLE-FLANDRES-ARTOIS - F - P
DAIMLER BENZ AKTIENGESELLSCHAFT - D - A
THOMSON-CSF - F - A
TELEFUNKEN SYSTEMTECHNIK GMBH - D - A


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AIMS - 5032, December 1993


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html version of synopsis by Nick Cook