Selective Deposition of Silicides and Epitaxial Silicon


SEDESES - 5004

Keywords refractory silicide deposition, epitaxial silicon deposition, cluster tools


Start Date: 01-JAN-90 / Duration: Terminated after 6 months

[ contact / participants ]


Objectives and Approach

The development of denser circuit integration requires new metallisation schemes so that low bulk and contact resistances are guaranteed. The new contact materials to be developed should show good temperature stability, electromigration resistance, selectivity versus SiO[2], and should avoid silicon consumption of the shallow contact to the source/drain region. An adequate in situ wafer-cleaning facility should provide a good interface between layers. In the SEDESES project it was proposed to develop a process and related equipment for the selective deposition of refractory silicides and epitaxial silicon.

By common agreement between the consortium and the Commission, the project was discontinued in June 1991, six months after its launch.


CONTACT POINT

Dr H.W. Piekaar
ASM INTERNATIONAL
Rembrandtlaan 2a
NL - 3723 BJ BILTHOVEN
tel: + 31/ 30-298411
fax: + 31/ 30-293461
telex: 47374

Participants

ASM INTERNATIONAL - NL - C
ALCATEL CIT - F - P
NATIONAL MICROELECTRONICS
RESEARCH CENTRE - IRL - P
SIEMENS AG - D - P
IMEC VZW - B - P
CNET - F - P


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SEDESES - 5004, December 1993


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html version of synopsis by Nick Cook