Keywords optoelectronics, III-V materials, InP, MISFETs
Start Date: 01-JAN-89 / Duration: 12 months
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The problem of the uniformity and reproducibility of GaInAsP (1.3 micron wavelength) epitaxial layers suitable for optoelectronics devices was addressed using LP-MOCVD growth process on 2" InP substrates. The work on materials has been supported by extensive material characterisation. In particular, the homogeneity of both substrates and epilayers has been measured non-destructively using spatially resolved photoluminescence. Ultimate validation of the material has been provided by GaInAsP optical waveguide and GaInAs MISFET devices.
A statistical analysis of the losses of waveguides distributed over a whole 2" wafer has demonstrated that more than 60% of the waveguides exhibit losses below 0.8 dB/cm, which was the target in this project. Besides, the distribution of the waveguide losses has been correlated with the bandgap wavelength variation over the 2" wafer.
The electrical properties of GaInAs epitaxial layers (ie the sheet resistance, external transconductance and the effective mobility) were found to be quite homogeneous over the 2" wafer.
GaInAs MISFETs with 1.5 micron gate length exhibited a cut-off frequency of 16 GHz and a maximum oscillation frequency of 14 GHz. The MISFETs showed a response time of 70 ps. However, due to the shift in the transfer characteristic of the inverters, no oscillation of the ring oscillator circuits could be recorded.
The project has demonstrated that high-quality (both optical and electrical) uniform GaInAsP epitaxial layers can be obtained reproducibly on 2" InP substrates using a commercially available LP-MOCVD growth process.
Mr M. Erman
Avenue Descartes 3
F - 94451 LIMEIL-BREVANNES CEDEX
tel: + 33/ 1-45699610
fax: + 33/ 1-45694088
PHILIPS-LEP - F - C
AIXTRON - D - P
RWTH AACHEN - D - P
ICI WAFER TECHNOLOGY - UK - P
Project 2518, December 1993
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html version of synopsis by Nick Cook