Process Modelling and Device Optimisation for Submicron Technologies


STORM - 2197

Keywords submicron technologies, process simulation, device simulation, simulation tools, design optimisation


Start Date: 01-FEB-89 / Duration: 50 months

[ contact / participants ]


Objectives and Approach

The objective of STORM was to develop a tool capable of simulating CMOS and bipolar device processes. The end product is a simulation environment, the "Project Code", incorporating advanced modules for process and device simulation, optimisation algorithms, and a user interface. Incorporated within the code is a set of more accurate models for the simulation of newly developed processes such as rapid thermal annealing, impurity diffusion from polysilicon and silicide, trench isolation, high energy and multilayer ion implantation, optical lithography, chemical vapour deposition, and glass reflow.

STORM was organised around three main work-packages. The first one was developing improved models for process simulation. For management reasons, it was divided in three sub-packages, dealing with dopant diffusion, thermal oxidation and topography, and ion implantation. The second work-package addressed optimisation techniques for device design with the aim of setting up an automatic optimisation tool, the third covered software integration and global validation on industrial applications.

STORM is able to simulate both CMOS and bipolar basic technologies, and to handle the optimisation of future BICMOS processes as well.

Results

Advanced models for process simulation have been developed for ion implantation, dopant diffusion in polysilicon, RTA, precipitation mechanisms, thermal oxidation, glass reflow and CVD, and have been evaluated on advanced CMOS and bipolar technologies. Optimisation tools have been developed following two alternative approaches: response surface method, and minimisation techniques.

Exploitation

The primary exploitation of the project results is being undertaken by the partners involved in IC manufacturing: ST, GEC-Plessey Semiconductors and CNET have made use of the superior performance of STORM's code in developing commercial products.

A 3D-lithography simulator, SOLID, has been developed and is already being commercialised by an international software house. An agreement has been reached with this company to market the final version of the STORM code after the end of the project.

STORM is linked to projects 7236 (ADEQUAT), 5080 (JLP) and 6135 (MIDAS), in which some of the STORM partners are also involved. They are validating the STORM code on the technologies developed in the projects mentioned. A new ESPRIT project on 3D simulation, 8150 (PROMPT), is based on the results of STORM.


CONTACT POINT

Mr Alain Poncet
CNET
Chemin du Vieux Chêne
F - 38243 MEYLAN CEDEX
tel: + 33/ 76-764257
fax: + 33/ 76-903443
telex: 980727 CNET GRE F

Participants

CNET - F - C
CNR-ISTITUTO LAMEL - I - P
IMEC VZW - B - P
GEC-PLESSEY SEMICONDUCTORS - UK - P
SGS-THOMSON MICROELECTRONICS SA - F - P
UNIVERSITA DI BOLOGNA - I - P
SGS-THOMSON MICROELECTRONICS SRL - I - P
NMRC - IRL - P
FRAUNHOFER GESELLSCHAFT AIS - D - P
FRAUNHOFER GESELLSCHAFT IMT - D - A


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STORM - 2197, December 1993


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html version of synopsis by Nick Cook